Growth of Ga0.46In0.54NyAs1-y Single Quantum Wells on InP(100) Substrate by Metalorganic Chemical Vapor Deposition.

UBUKATA A; DONG J; MATSUMOTO K; ISHIHARA Y

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J-GLOBAL ID：200902170755595106 Reference number：01A0052307

Growth of Ga_0.46In_0.54N_yAs_1-y Single Quantum Wells on InP(100) Substrate by Metalorganic Chemical Vapor Deposition.

有機金属化学蒸着によるInP(100)基板上のGa_0.46In_0.54N_yAs_1-y単一量子井戸の成長

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Material：
Volume： 39 Issue： 10 Page： 5962-5965 Publication year： Oct. 15, 2000
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Semiconductor-semiconductor contacts with Gr.13-15 element compounds , Semiconductor thin films , Luminescence of semiconductors

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