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J-GLOBAL ID:200902172399581360   Reference number:00A0145232

Final Polishing of Ga-Polar GaN Substrates using Reactive Ion Etching.

反応性イオンエッチングを用いたGa-極性GaN基板の最終研磨
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Volume: 28  Issue: 12  Page: 1448-1451  Publication year: Dec. 1999 
JST Material Number: D0277B  ISSN: 0361-5235  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Manufacturing technology of solid-state devices 
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