Self-organized quantum dot structures in strained (GaP)<sub>n</sub>(InP)<sub>m</sub> short period superlattices grown on GaAs (N11) by gas-source MBE.

KIM S J; ASAHI H; TAKEMOTO M; ASAMI K; NOH J H; GONDA S

Art

J-GLOBAL ID：200902172592428285 Reference number：97A0763703

Self-organized quantum dot structures in strained (GaP)_n(InP)_m short period superlattices grown on GaAs (N11) by gas-source MBE.

GaAs(N11)上に気体原料MBEにより成長させた歪(GaP)_n/(InP)_m短周期超格子における自己組織化量子ドット構造

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=97A0763703&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=97A0763703&from=J-GLOBAL&jstjournalNo=B0942A") }}

Author (6)： , , , , ,
Material：
Volume： 175/176 Issue： Pt.2 Page： 754-759 Publication year： May. 1997
JST Material Number： B0942A ISSN： 0022-0248 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=97A0763703&from=J-GLOBAL&jstjournalNo=B0942A") }}

Semiconductor thin films

, , , , , , , , , ,

Return to Previous Page

Self-organized quantum dot structures in strained (GaP)n(InP)m short period superlattices grown on GaAs (N11) by gas-source MBE.

Self-organized quantum dot structures in strained (GaP)_n(InP)_m short period superlattices grown on GaAs (N11) by gas-source MBE.