Art
J-GLOBAL ID：200902173095538090
Reference number：98A1005026
Capacitor fabrication technology with(Ba, Sr)TiO3 thin films for Gbit-scale DRAMs.
(Ba,Sr)TiO3(BST)薄膜を用いたギガビットDRAM用キャパシター形成技術
Author (2)：
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Material：
Volume：
67
Issue：
11
Page：
1239-1248
Publication year：
Nov. 1998
JST Material Number：
F0252A
ISSN：
0369-8009
CODEN：
OYBSA
Document type：
Article
Article type：
解説
Country of issue：
Japan (JPN)
Language：
JAPANESE (JA)
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor integrated circuit
Reference (87)：
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LESAICHERRE, P-Y. IEEE IEDM Tech.Dig. 1994, 831
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YUUKI, A. IEEE IEDM Tech.Dig. 1995, 115
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YAMAMICHI, S. IEEE IEDM Tech.Dig. 1995, 119
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LEE, K. P. IEEE IEDM Tech.Dig. 1995, 907
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YAMAGUCHI, H. IEEE IEDM Tech.Dig. 1996, 675
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