Art
J-GLOBAL ID：200902173289393815   Reference number：96A0829325

High purity ozone oxidation on hydrogen passivated silicon surface.

水素不動態化したシリコン表面の高純度オゾン酸化
Author (2)：
KUROKAWA A

About KUROKAWA A

(Electrotechnical Lab., Tsukuba, JPN)

About Electrotechnical Lab., Tsukuba, JPN

, 
ICHIMURA S

About ICHIMURA S

(Electrotechnical Lab., Tsukuba, JPN)

About Electrotechnical Lab., Tsukuba, JPN


Material：
Applied Surface Science  (Appl Surf Sci)

About Applied Surface Science


Volume： 100/101  Page： 436-439  Publication year： Jul. 1996 
JST Material Number： B0707B  ISSN： 0169-4332  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
passivation

About passivation

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Manufacturing technology of solid-state devices 
(NC03030V)

About Manufacturing technology of solid-state devices

,  Other noncatalytic reactions 
(CB06070U)

About Other noncatalytic reactions

Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
水素

About 水素

, 
不動態化

About 不動態化

, 
シリコン

About シリコン

, 
高純度

About 高純度

, 
オゾン酸化

About オゾン酸化


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