Art
J-GLOBAL ID：200902173656659380   Reference number：96A0004669

Reversible hydrogen annealing of metal-oxide-silicon carbide devices at high temperatures.

高温での金属-酸化物-炭化けい素素子の可逆的な水素アニーリング
Author (3)：
BARANZAHI A

About BARANZAHI A

(Linkoeping Univ., Linkoeping, SWE)

About Linkoeping Univ., Linkoeping, SWE

, 
SPETZ A L

About SPETZ A L

(Linkoeping Univ., Linkoeping, SWE)

About Linkoeping Univ., Linkoeping, SWE

, 
LUNDSTROEM I

About LUNDSTROEM I

(Linkoeping Univ., Linkoeping, SWE)

About Linkoeping Univ., Linkoeping, SWE


Material：
Applied Physics Letters  (Appl Phys Lett)

About Applied Physics Letters


Volume： 67  Issue： 21  Page： 3203-3205  Publication year： Nov. 20, 1995 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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annealing (heat treatment)

About annealing (heat treatment)

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Metal-insulator-semiconductor structures 
(BM03085X)

About Metal-insulator-semiconductor structures

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
酸化物

About 酸化物

, 
炭化けい素

About 炭化けい素

, 
水素

About 水素

, 
アニーリング

About アニーリング


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