Art
J-GLOBAL ID：200902173831198781
Reference number：93A0653703
Silicide formation and silicide-mediated crystallization of nickel-implanted amorphous silicon thin films.
ニッケルイオンを注入したアモルファスシリコン薄膜のけい化物の形成とけい化物が仲介する結晶化
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Author (2)：
,
Material：
Volume：
73
Issue：
12
Page：
8279-8289
Publication year：
Jun. 15, 1993
JST Material Number：
C0266A
ISSN：
0021-8979
CODEN：
JAPIAU
Document type：
Article
Article type：
原著論文
Country of issue：
United States (USA)
Language：
ENGLISH (EN)
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Irradiational changes semiconductors
, Metallic thin films
Terms in the title (7)：
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