Art
J-GLOBAL ID：200902173967594567   Reference number：93A0710763

Evaluation of Lateral Zn Diffusion in GaAs under a Diffusion Mask.

GaAs中のZnの横方向拡散とその評価法
Author (1)：
NAKAJIMA OSAAKI

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(NTT)

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Material：
電気学会論文誌 C  (IEEJ Transactions on Electronics, Information and Systems)

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Volume： 113  Issue： 7  Page： 556-565  Publication year： Jul. 1993 
JST Material Number： S0810A  ISSN： 0385-4221  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： JAPANESE (JA)
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gallium arsenide

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,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
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On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
EBIC

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JST classification (2)：
JST classification
Category name(code) classified by JST.
Diffusion in solids in general 
(BL06021L)

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,  Manufacturing technology of solid-state devices 
(NC03030V)

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Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
GaAs

About GaAs

, 
Zn

About Zn

, 
横方向

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, 
拡散

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, 
評価法

About 評価法


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