Art
J-GLOBAL ID：200902174129410787   Reference number：99A0892761

Memory properties of SrBi2Ta2O9 thin films prepared on SiO2/Si substrates.

SiO2/Si基板上に形成したSrBi2Ta2O9薄膜のメモリ特性
Author (2)：
XIONG S-B

About XIONG S-B

(Electrotechnical Lab., Ibaraki, JPN)

About Electrotechnical Lab., Ibaraki, JPN

, 
SAKAI S

About SAKAI S

(Electrotechnical Lab., Ibaraki, JPN)

About Electrotechnical Lab., Ibaraki, JPN


Material：
Applied Physics Letters  (Appl Phys Lett)

About Applied Physics Letters


Volume： 75  Issue： 11  Page： 1613-1615  Publication year： Sep. 13, 1999 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
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All keywords is available on JDreamIII(charged).
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tantalate

About tantalate

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Ferroelectrics,antiferroelectrics and ferroelasticity 
(BM05030B)

About Ferroelectrics,antiferroelectrics and ferroelasticity

Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
SiO2

About SiO2

, 
Si基板

About Si基板

, 
薄膜

About 薄膜


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