Wurtzite GaN epitaxial growth on a Si(001) substrate using γ-Al<sub>2</sub>O<sub>3</sub> as an intermediate layer.

WANG L; LIU X; ZAN Y; WANG J; WANG D; LU D-C; WANG Z

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J-GLOBAL ID：200902174324929622 Reference number：98A0189274

Wurtzite GaN epitaxial growth on a Si(001) substrate using γ-Al₂O₃ as an intermediate layer.

ガンマ-Al₂O₃を中間層として用いたSi(001)基板上へのウルツ鉱型GaNのエピタキシャル成長

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Author (7)： , , , , , ,
Material：
Volume： 72 Issue： 1 Page： 109-111 Publication year： Jan. 05, 1998
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films

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Wurtzite GaN epitaxial growth on a Si(001) substrate using γ-Al2O3 as an intermediate layer.

Wurtzite GaN epitaxial growth on a Si(001) substrate using γ-Al₂O₃ as an intermediate layer.