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J-GLOBAL ID:200902174820300939   Reference number:01A1048665

Development of High-Power Ultraviolet Light-Emitting Diodes Using Lateral Epitaxy on a Patterned Substrate.

LEPS法を用いた高出力紫外LEDの開発
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Issue: 98  Page: 92-96  Publication year: Oct. 31, 2001 
JST Material Number: F0516A  ISSN: 0913-0101  Document type: Article
Article type: 原著論文  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Light emitting devices 
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