Carrier profiles and electron traps at a growth-interrupted layer in GaAs fabricated by a focused ion beam and molecular beam epitaxy combined system.

GOTO T; HADA T; YANAGISAWA J; WAKAYA F; YUBA Y; GAMO K

Art

J-GLOBAL ID：200902175096250793 Reference number：00A0812155

Carrier profiles and electron traps at a growth-interrupted layer in GaAs fabricated by a focused ion beam and molecular beam epitaxy combined system.

集束イオンビームと分子ビームエピタクシーの組合せ系により作製したGaAsにおける成長中断層でのキャリアプロフィルと電子トラップ

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Author (6)： , , , , ,
Material：
Volume： 159/160 Page： 277-281 Publication year： Jun. 2000
JST Material Number： B0707B ISSN： 0169-4332 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Semiconductor thin films , Lattice defects in semiconductors

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