Effect of thermal annealing on the Raman spectrum of Si<sub>1-x</sub>Ge<sub>x</sub> grown on Si.

NAKANO N; MARVILLE L; JANG S-M; LIAO K; TSAI C; TSAI J; KIM H-W; REIF R

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J-GLOBAL ID：200902175523598305 Reference number：93A0188239

Effect of thermal annealing on the Raman spectrum of Si_1-xGe_x grown on Si.

Si上に成長させたSi_1-xGe_xのRamanスペクトルに及ぼす熱アニールの効果

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Author (8)： , , , , , , ,
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Volume： 73 Issue： 1 Page： 414-417 Publication year： Jan. 01, 1993
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films

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Effect of thermal annealing on the Raman spectrum of Si1-xGex grown on Si.

Effect of thermal annealing on the Raman spectrum of Si_1-xGe_x grown on Si.