Art
J-GLOBAL ID：200902175584765018
Reference number：97A0841070
Step-controlled epitaxial growth of SiC: high quality homoepitaxy.
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Author (2)：
,
Material：
Volume：
R20
Issue：
3
Page：
XV-XVI,125-166
Publication year：
Aug. 1997
JST Material Number：
T0341A
ISSN：
0927-796X
Document type：
Article
Country of issue：
Netherlands (NLD)
Language：
ENGLISH (EN)
Terms in the title (2)：
Terms in the title
Keywords automatically extracted from the title.
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