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J-GLOBAL ID:200902175873594680   Reference number:99A0382820

Novel Defect Complexes and Their Role in the p-Type Doping of GaN.

GaN中の新しい欠陥複合体とp型ドーピングにおけるそれらの役割
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Volume: 82  Issue:Page: 1887-1890  Publication year: Mar. 01, 1999 
JST Material Number: H0070A  ISSN: 0031-9007  CODEN: PRLTAO  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Lattice defects in semiconductors 
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