High temperature growth of ZnS and ZnMgS by molecular beam epitaxy under high sulfur beam pressure.

ICHINO K; UEYAMA K; YAMAMOTO M; KARIYA H; MIYATA H; MISASA H; KTAGAWA M; KOBAYASHI H

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J-GLOBAL ID：200902176079504702 Reference number：00A0596680

High temperature growth of ZnS and ZnMgS by molecular beam epitaxy under high sulfur beam pressure.

高い硫黄ビーム圧力下におけるZnS並びにZnMgSの分子ビームエピタクシーによる高温成長

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Material：
Volume： 87 Issue： 9,Pt.1 Page： 4249-4253 Publication year： May. 01, 2000
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films

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