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Art
J-GLOBAL ID:200902176261340502   Reference number:94A0221083

Gas and adsorbate excitation pathways in synchrotron radiation excited Si growth using disilane.

ジシランを用いたシンクロトロン放射励起Si成長におけるガス及び吸着質励起の効果
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Material:
Volume: 64  Issue:Page: 754-756  Publication year: Feb. 07, 1994
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Semiconductor thin films  ,  Semiconductor-semiconductor contacts without Gr.13-15 element compounds 
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