Art
J-GLOBAL ID：200902176592237680   Reference number：01A0083828

Improvement of contact resistances on plasma-exposed silicon carbide.

プラズマ露出シリコンカーバイド上接触抵抗の改善
Author (4)：
CHEUNG R

About CHEUNG R

(Univ. Canterbury, Christchurch, NZL)

About Univ. Canterbury, Christchurch, NZL

, 
HAY J

About HAY J

(Univ. Canterbury, Christchurch, NZL)

About Univ. Canterbury, Christchurch, NZL

, 
VAN DER DRIFT E

About VAN DER DRIFT E

(Technical Univ. Delft, Delft, NLD)

About Technical Univ. Delft, Delft, NLD

, 
GAO W

About GAO W

(Univ. Auckland, NZL)

About Univ. Auckland, NZL


Material：
Solid-State Electronics  (Solid-State Electron)

About Solid-State Electronics


Volume： 44  Issue： 11  Page： 2081-2083  Publication year： Nov. 2000 
JST Material Number： H0225A  ISSN： 0038-1101  Document type： Article
Article type： 短報  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
*silicon carbide

About silicon carbide

,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=01A0083828&from=J-GLOBAL&jstjournalNo=H0225A") }}
JST classification (1)：
JST classification
Category name(code) classified by JST.
Materials of solid-state devices 
(NC03020K)

About Materials of solid-state devices

Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
プラズマ

About プラズマ

, 
シリコンカーバイド

About シリコンカーバイド

, 
接触抵抗

About 接触抵抗


Return to Previous Page

TOP

BOTTOM