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J-GLOBAL ID：200902177238541602   Reference number：97A1036830

0.25μm CoSi2 salicide CMOS technology thermally stable up to 1,000°C with high TDDB reliability.

1000°Cまで熱的に安定で高いTDDB信頼性を有する0.25μm CoSi₂サリサイドCMOS技術

Author (9)： OHGURO T (Toshiba Corp., Kawasaki, JPN) ,  NAKAMURA S (Toshiba Corp., Kawasaki, JPN) ,  MORIFUJI E (Toshiba Corp., Kawasaki, JPN) ,  YOSHITOMI T (Toshiba Corp., Kawasaki, JPN) ,  MORIMOTO T (Toshiba Corp., Kawasaki, JPN) ,  HARAKAWA H (Toshiba Corp., Kawasaki, JPN) ,  MOMOSE H S (Toshiba Corp., Kawasaki, JPN) ,  KATSUMATA Y (Toshiba Corp., Kawasaki, JPN) ,  IWAI H (Toshiba Corp., Kawasaki, JPN)
Material： Digest of Technical Papers. Symposium on VLSI Technology  (Symposium on VLSI Technology)
Volume： 1997  Page： 101-102  Publication year： 1997 
JST Material Number： A0035B  ISSN： 0743-1562  Document type： Proceedings
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *CMOS structure ,...
Semi thesaurus term： Time-Dependent Dielectric Breakdown

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JST classification (2)： Measurement,testing and reliability of solid-state devices  (NC03040G) ,  Manufacturing technology of solid-state devices  (NC03030V)

Terms in the title (2)： TDDB ,  CMOS技術