Direct observation of synchrotron-radiation-stimulated desorption of thin SiO<sub>2</sub> films on Si(111) by scanning tunneling microscopy.

MIYAMAE T; UCHIDA H; MUNRO I H; URISU T

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J-GLOBAL ID：200902177326929947 Reference number：99A0886603

Direct observation of synchrotron-radiation-stimulated desorption of thin SiO₂ films on Si(111) by scanning tunneling microscopy.

走査型トンネル顕微鏡観察によるSi(111)上のSiO₂薄膜のシンクロトロン放射刺激脱離の直接観察

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Author (4)： , , ,
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Volume： 437 Issue： 1/2 Page： L755-L760 Publication year： Aug. 20, 1999
JST Material Number： C0129B ISSN： 0039-6028 Document type： Article
Article type：短報 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Study of adsorption by physical means

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Direct observation of synchrotron-radiation-stimulated desorption of thin SiO2 films on Si(111) by scanning tunneling microscopy.

Direct observation of synchrotron-radiation-stimulated desorption of thin SiO₂ films on Si(111) by scanning tunneling microscopy.