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J-GLOBAL ID:200902178613535786   Reference number:98A0662109

Investigation of the research and development results of SI devices.[ 3 ]. 3. Characteristic improvement technique for electrostatically-inductive rectifier diodes.

SIデバイスの研究開発成果を追う [第3回] 3. 静電誘導型整流ダイオードの特性改善手法
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Material:
Volume: 37  Issue:Page: 86-91  Publication year: Jul. 1998 
JST Material Number: F0040A  ISSN: 0387-0774  Document type: Article
Article type: 解説  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Diodes 

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