Reduction of oscillator strength due to piezoelectric fields in GaN/Al<sub>x</sub>Ga<sub>1-x</sub>N quantum wells.

IM J S; KOLLMER H; OFF J; SOHMER A; SCHOLZ F; HANGLEITER A

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J-GLOBAL ID：200902179196461983 Reference number：98A0515405

Reduction of oscillator strength due to piezoelectric fields in GaN/Al_xGa_1-xN quantum wells.

GaN/Al_xGa_1-xN量子井戸の圧電場に起因した振動子強度低下

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Volume： 57 Issue： 16 Page： R9435-R9438 Publication year： Apr. 15, 1998
JST Material Number： D0746A ISSN： 1098-0121 CODEN： PRBMDO Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Luminescence of semiconductors

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Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells.

Reduction of oscillator strength due to piezoelectric fields in GaN/Al_xGa_1-xN quantum wells.