2.12μm InGaAs-InGaAlAs-InP diode lasers grown in solid-source molecular-beam epitaxy.

KUANG G K; BOEHM G; GRAU M; ROESEL G; MEYER R; AMANN M-C

Art

J-GLOBAL ID：200902179633889718 Reference number：00A1013384

2.12μm InGaAs-InGaAlAs-InP diode lasers grown in solid-source molecular-beam epitaxy.

固体源分子ビームエピタクシーで成長させた2.12μm InGaAs-InGaAlAs-InPダイオードレーザ

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Material：
Volume： 77 Issue： 8 Page： 1091-1092 Publication year： Aug. 21, 2000
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor lasers , Semiconductor thin films

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