Art
J-GLOBAL ID：200902181968168440   Reference number：00A0879383

Hydrogen as a Cause of Doping in Zinc Oxide.

酸化亜鉛におけるドーピングの原因としての水素
Author (1)：
VAN DE WALLE C G

About VAN DE WALLE C G

(Fritz-Haber-Inst. Max-Planck-Gesellschaft, Berlin-Dahlem, DEU)

About Fritz-Haber-Inst. Max-Planck-Gesellschaft, Berlin-Dahlem, DEU


Material：
Physical Review Letters  (Phys Rev Lett)

About Physical Review Letters


Volume： 85  Issue： 5  Page： 1012-1015  Publication year： Jul. 31, 2000 
JST Material Number： H0070A  ISSN： 0031-9007  CODEN： PRLTAO  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
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*zinc oxide

About zinc oxide

,...
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JST classification (1)：
JST classification
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Lattice defects in semiconductors 
(BK12040Q)

About Lattice defects in semiconductors

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
酸化亜鉛

About 酸化亜鉛

, 
ドーピング

About ドーピング

, 
原因

About 原因

, 
水素

About 水素


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