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J-GLOBAL ID:200902181968168440   Reference number:00A0879383

Hydrogen as a Cause of Doping in Zinc Oxide.

酸化亜鉛におけるドーピングの原因としての水素
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Volume: 85  Issue:Page: 1012-1015  Publication year: Jul. 31, 2000 
JST Material Number: H0070A  ISSN: 0031-9007  CODEN: PRLTAO  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Lattice defects in semiconductors 
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