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J-GLOBAL ID:200902184024036818   Reference number:01A0611787

Evaluation of Performance of Metal Oxide-silicon Semiconductor Field Effect Transistor (MOSFET) Dosimeter.

MOS型電界効果トランジスタ線量計の性能評価
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Volume: 57  Issue:Page: 234-242  Publication year: Feb. 20, 2001 
JST Material Number: F0884A  ISSN: 0369-4305  CODEN: NIPHAP  Document type: Article
Article type: 原著論文  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Radiotherapy  ,  Contamination of man and its prevention 
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