High responsitivity intrinsic photoconductors based on Al<sub>x</sub>Ga<sub>1-x</sub>N.

LIM B W; CHEN Q C; YANG J Y; KHAN M A

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J-GLOBAL ID：200902186042200490 Reference number：96A0602310

High responsitivity intrinsic photoconductors based on Al_xGa_1-xN.

Al_xGa_1-xNに基づく高感度の真性光伝導体

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Author (4)： , , ,
Material：
Volume： 68 Issue： 26 Page： 3761-3762 Publication year： Jun. 24, 1996
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Photoconduction,photoelectromotive force , Photodetectors

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High responsitivity intrinsic photoconductors based on AlxGa1-xN.

High responsitivity intrinsic photoconductors based on Al_xGa_1-xN.