Influence of the Purity of Source Precursors on the Electrical Properties of Pb(Zr, Ti)O<sub>3</sub> Thin Films Prepared by Metalorganic Chemical Vapor Deposition.

FUJISAWA H; YOSHIDA M; SHIMIZU M; NIU H

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J-GLOBAL ID：200902186483461508 Reference number：98A0950493

Influence of the Purity of Source Precursors on the Electrical Properties of Pb(Zr, Ti)O₃ Thin Films Prepared by Metalorganic Chemical Vapor Deposition.

有機金属化学気相蒸着によるPb(Zr,Ti)O₃薄膜の電気特性に及ぼす原料前駆体純度の影響

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Material：
Volume： 37 Issue： 9B Page： 5132-5136 Publication year： Sep. 1998
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Ferroelectrics,antiferroelectrics and ferroelasticity , Oxide thin films

Reference (1)：

SAKUMA, T. Ext. Abstr. (52nd Autumn Meet. 1991); The Japan Society of Applied Physics

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Influence of the Purity of Source Precursors on the Electrical Properties of Pb(Zr, Ti)O3 Thin Films Prepared by Metalorganic Chemical Vapor Deposition.

Influence of the Purity of Source Precursors on the Electrical Properties of Pb(Zr, Ti)O₃ Thin Films Prepared by Metalorganic Chemical Vapor Deposition.