Art
J-GLOBAL ID：200902188525707971   Reference number：99A0395548

Single Electron Devices and Their Applications.

単一電子デバイスとその応用
Author (1)：
LIKHAREV K K

About LIKHAREV K K

(State Univ. New York, NY, USA)

About State Univ. New York, NY, USA


Material：
Proceedings of the IEEE  (Proc IEEE)

About Proceedings of the IEEE


Volume： 87  Issue： 4  Page： 606-632  Publication year： Apr. 1999 
JST Material Number： D0378A  ISSN： 0018-9219  CODEN： IEEPAD  Document type： Article
Article type： 文献レビュー  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
*single electron tunnel effect

About single electron tunnel effect

,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=99A0395548&from=J-GLOBAL&jstjournalNo=D0378A") }}
JST classification (1)：
JST classification
Category name(code) classified by JST.
Solic-state devices in general 
(NC03010Z)

About Solic-state devices in general

Terms in the title (2)：
Terms in the title
Keywords automatically extracted from the title.
単一電子デバイス

About 単一電子デバイス

, 
応用

About 応用


Return to Previous Page

TOP

BOTTOM