Art
J-GLOBAL ID：200902188600589840
Reference number：00A0729029
Low-k Si-O-C-H composite films prepared by plasma-enhanced chemical vapor deposition using bis-trimethylsilylmethane precursor.
ビス-トリメチルシリルメタン前駆体を用いたプラズマ増強化学蒸着により作製した低k Si-O-C-Hコンポジット膜
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Author (3)：
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Material：
Volume：
18
Issue：
4,Pt.1
Page：
1216-1219
Publication year：
Jul. 2000
JST Material Number：
C0789B
ISSN：
0734-2101
CODEN：
JVTAD6
Document type：
Article
Article type：
原著論文
Country of issue：
United States (USA)
Language：
ENGLISH (EN)
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Oxide thin films
, Dielectrics in general
Substance index (1)：
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Terms in the title (6)：
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