Art
J-GLOBAL ID:200902189154418463   Reference number:96A0107555

Electrical properties of Si1-xCx alloys and modulation doped Si/Si1-xCx/Si structures.

Si1-xCx合金の電気特性と変調ドープSi/Si1-xCx/Si構造
Author (4):
Material:
Volume: 67  Issue: 26  Page: 3933-3935  Publication year: Dec. 25, 1995 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=96A0107555&from=J-GLOBAL&jstjournalNo=H0613A") }}
JST classification (1):
JST classification
Category name(code) classified by JST.
Electric conduction in crystalline semiconductors 
Terms in the title (4):
Terms in the title
Keywords automatically extracted from the title.

Return to Previous Page