On the origin of the 1.5μm luminescence in ion beam synthesized β-FeSi<sub>2</sub>.

LEONG D N; HARRY M A; REESON K J; HOMEWOOD K P

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J-GLOBAL ID：200902189996366291 Reference number：96A0336442

On the origin of the 1.5μm luminescence in ion beam synthesized β-FeSi₂.

イオンビーム合成したβ-FeSi₂の1.5μmルミネセンスの起源

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Volume： 68 Issue： 12 Page： 1649-1650 Publication year： Mar. 18, 1996
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Luminescence of semiconductors

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On the origin of the 1.5μm luminescence in ion beam synthesized β-FeSi2.

On the origin of the 1.5μm luminescence in ion beam synthesized β-FeSi₂.