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J-GLOBAL ID：200902190150331280   Reference number：97A1019203

Retention Characteristics of a Ferroelectric Memory Based on SrBi₂(Ta, Nb)₂O₉.

SrBi₂(Ta,Nb)₂O₉による強誘電体メモリの保持特性

Author (6)： SHIMADA Y (Matsushita Electronics Corp., Osaka, JPN) ,  AZUMA M (Matsushita Electronics Corp., Osaka, JPN) ,  NAKAO K (Matsushita Electronics Corp., Osaka, JPN) ,  CHAYA S (Matsushita Electronics Corp., Kyoto, JPN) ,  MORIWAKI N (Matsushita Electronics Corp., Kyoto, JPN) ,  OTSUKI T (Matsushita Electronics Corp., Osaka, JPN)
Material： Japanese Journal of Applied Physics. Part 1. Regular Papers, Short Notes & Review Papers  (Japanese Journal of Applied Physics. Part 1. Regular Papers, Brief Communications & Review Papers)
Volume： 36  Issue： 9B  Page： 5912-5916  Publication year： Sep. 1997 
JST Material Number： G0520B  ISSN： 0021-4922  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： layered compound ,...

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JST classification (2)： Ferroelectrics,antiferroelectrics and ferroelasticity  (BM05030B) ,  Semiconductor integrated circuit  (NC03162T)

Reference (16)：

• 1) T. Mihara, H. Watanabe, C. A. Paz de Araujo, J. Cuchiaro, M. Scott and L. D. McMillan: Proc. 4th Int. Symp. Integr. Ferroelectrics, Monterey, CA (1992) p. 137.
• 2) C. A. Paz de Araujo, J. D. Cuchiaro, L. D. McMillan, M. C. Scott and J. F. Scott: Nature 374 (1995) 627.
• 3) P. C. Fazan: Integr. Ferroelectr. 4 (1994) 247.
• 4) W. Kinney: Integr. Ferroelectr. 4 (1994) 131.
• 5) N. E. Abt: Proc. 3rd Int. Symp. Integr. Ferroelectrics, Colorado Springs, CO (1991) p. 404.

Terms in the title (4)： Ta ,  Nb ,  強誘電体メモリ ,  保持特性