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J-GLOBAL ID：200902190353230943   Reference number：96A0299887

Room-temperature photoenhanced wet etching of GaN.

GaNの室温における光促進湿式エッチング
Author (3)：
MINSKY M S

About MINSKY M S

(Univ. California, California)

About Univ. California, California

, 
WHITE M

About WHITE M

(Univ. California, California)

About Univ. California, California

, 
HU E L

About HU E L

(Univ. California, California)

About Univ. California, California


Material：
Applied Physics Letters  (Appl Phys Lett)

About Applied Physics Letters


Volume： 68  Issue： 11  Page： 1531-1533  Publication year： Mar. 11, 1996 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
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Keywords indexed to the article.
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gallium nitride

About gallium nitride

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Techniques for samples 
(BA02070O)

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,  Manufacturing technology of solid-state devices 
(NC03030V)

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Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
GaN

About GaN

, 
室温

About 室温

, 
促進

About 促進

, 
湿式エッチング

About 湿式エッチング


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