Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition.

KELLER S; KELLER B P; WU Y-F; HEYING B; KAPOLNEK D; SPECK J S; MISHRA U K; DENBAARS S P

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J-GLOBAL ID：200902190552617466 Reference number：96A0299885

Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition.

有機金属化学蒸着によって成長させた窒化ガリウムの性質に及ぼすサファイアの窒化の影響

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Material：
Volume： 68 Issue： 11 Page： 1525-1527 Publication year： Mar. 11, 1996
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films

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