Art
J-GLOBAL ID：200902190879112945   Reference number：99A0525638

Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon.

シリコン上に直接堆積したけい酸ハフニウム絶縁体ゲートの電気特性
Author (2)：
WILK G D

About WILK G D

(Texas Instruments, Texas)

About Texas Instruments, Texas

, 
WALLACE R M

About WALLACE R M

(Texas Instruments, Texas)

About Texas Instruments, Texas


Material：
Applied Physics Letters  (Appl Phys Lett)

About Applied Physics Letters


Volume： 74  Issue： 19  Page： 2854-2856  Publication year： May. 10, 1999 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
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CMOS structure

About CMOS structure

,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
interface reaction

About interface reaction


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JST classification (1)：
JST classification
Category name(code) classified by JST.
Transistors 
(NC03070N)

About Transistors

Terms in the title (6)：
Terms in the title
Keywords automatically extracted from the title.
シリコン

About シリコン

, 
堆積

About 堆積

, 
けい酸ハフニウム

About けい酸ハフニウム

, 
絶縁体

About 絶縁体

, 
ゲート

About ゲート

, 
電気特性

About 電気特性


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