Influence of Si growth temperature for embedding β-FeSi2 and resultant strain in β-FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes.

SUEMASU T; NEGISHI Y; TAKAKURA K; HASEGAWA F; CHIKYOW T

Art

J-GLOBAL ID：200902191267352870 Reference number：01A0976265

Influence of Si growth temperature for embedding β-FeSi₂ and resultant strain in β-FeSi₂ on light emission from p-Si/β-FeSi₂ particles/n-Si light-emitting diodes.

p-Si/β-FeSi₂粒子/n-Si発光ダイオードからの発光に対するβ-FeSi₂の埋込みとその結果のβ-FeSi₂中の歪みへのSiの成長温度の影響

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Material：
Volume： 79 Issue： 12 Page： 1804-1806 Publication year： Sep. 17, 2001
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Luminescence of semiconductors , Semiconductor thin films

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