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J-GLOBAL ID:200902191267352870   Reference number:01A0976265

Influence of Si growth temperature for embedding β-FeSi2 and resultant strain in β-FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes.

p-Si/β-FeSi2粒子/n-Si発光ダイオードからの発光に対するβ-FeSi2の埋込みとその結果のβ-FeSi2中の歪みへのSiの成長温度の影響
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Volume: 79  Issue: 12  Page: 1804-1806  Publication year: Sep. 17, 2001 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Luminescence of semiconductors  ,  Semiconductor thin films 
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