Art
J-GLOBAL ID：200902191350982576   Reference number：01A0554564

Interfatial Reaction of Vapor Deposited Si and Ge Layers and Substrate Atomic Layer.

Si,Ge蒸着層と下地原子層との界面反応
Author (2)：
HORIO JUN'YA

About HORIO JUN'YA

(長崎総科大)

About 長崎総科大

, 
OKUNO KIMIO

About OKUNO KIMIO

(長崎総科大)

About 長崎総科大


Material：
真空  (Journal of the Vacuum Society of Japan)

About 真空


Volume： 44  Issue： 3  Page： 202-205  Publication year： Mar. 20, 2001 
JST Material Number： G0194A  ISSN： 0559-8516  CODEN： SHINA  Document type： Article
Article type： 短報  Country of issue： Japan (JPN)  Language： JAPANESE (JA)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
semiconductor thin film

About semiconductor thin film

,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=01A0554564&from=J-GLOBAL&jstjournalNo=G0194A") }}
JST classification (2)：
JST classification
Category name(code) classified by JST.
Other noncatalytic reactions 
(CB06070U)

About Other noncatalytic reactions

,  Thin films of other inorganic compounds 
(BK14060A)

About Thin films of other inorganic compounds

Reference (10)：
  • JBRILLSON, L. Surf. Sci. Rep. 1982, 2, 123
  • BORISENKO, Victor E. Semiconducting Silicides. 2000
  • NISHIKAWA, O. J. Vac. Sci. Tchnol. 1983, B1, 4
  • NISHIKAWA, O. J. Vac. Sci. Tchnol. 1983, B1, 4
  • TSONG, T. T. J. Vac. Sci. Tchnol. 1983, B1, 915
ｍore...
Terms in the title (6)：
Terms in the title
Keywords automatically extracted from the title.
Si

About Si

, 
Ge

About Ge

, 
蒸着

About 蒸着

, 
下地

About 下地

, 
原子層

About 原子層

, 
界面反応

About 界面反応


Return to Previous Page

TOP

BOTTOM