Charge transport in strained Si1-yCy and Si1-x-yGexCy alloys on Si(001).

OSTEN H J; GAWORZEWSKI P

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J-GLOBAL ID：200902191435707310 Reference number：98A0067409

Charge transport in strained Si_1-yC_y and Si_1-x-yGe_xC_y alloys on Si(001).

Si(001)上の歪んだSi_1-yC_yおよびSi_1-x-yGe_xC_y合金における電荷輸送

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Material：
Volume： 82 Issue： 10 Page： 4977-4981 Publication year： Nov. 15, 1997
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Electric conduction in crystalline semiconductors , Lattice defects in semiconductors

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