Art
J-GLOBAL ID:200902191925021913   Reference number:01A0016977

InxGa1-xN light emitting diodes on Si substrates fabricated by Pd-In metal bonding and laser lift-off.

Pd-In金属ボンディングとレーザリフトオフによって製作したSi基板上のInxGa1-xN発光ダイオード
Author (8):
Material:
Volume: 77  Issue: 18  Page: 2822-2824  Publication year: Oct. 30, 2000 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=01A0016977&from=J-GLOBAL&jstjournalNo=H0613A") }}
JST classification (1):
JST classification
Category name(code) classified by JST.
Light emitting devices 

Return to Previous Page