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J-GLOBAL ID:200902193303575183   Reference number:02A0628232

Structural characterization of nonpolar (11<span style=text-decoration:overline>2-</span>0) a-plane GaN thin films grown on (1<span style=text-decoration:overline>1-</span>02) r-plane sapphire.

(1-102)r面サファイア基板上に成長した無極性(11-20)a面GaN薄膜の構造の特性化
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Material:
Volume: 81  Issue:Page: 469-471  Publication year: Jul. 15, 2002 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Semiconductor thin films  ,  Surface structure of semiconductors 
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