High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors.

YANO H; HIRAO T; KIMOTO T; MATSUNAMI H

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J-GLOBAL ID：200902193432239530 Reference number：00A0544384

High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors.

パワースイッチングトランジスタ用のSiC MOSFETの反転層における高チャネル移動度

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Volume： 39 Issue： 4B Page： 2008-2011 Publication year： Apr. 30, 2000
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Transistors

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