Art
J-GLOBAL ID:200902193596476540
Reference number:00A0867319
Trap creation in ultrathin SiO2 films due to electron injection studied by scanning tunneling microscopy/scanning tunneling spectroscopy.
走査型トンネル顕微鏡法/走査型トンネル分光法により調べた電子注入によるSiO2超薄膜へのトラップ生成
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Author (3):
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Material:
Volume:
162/163
Page:
395-400
Publication year:
Aug. 2000
JST Material Number:
B0707B
ISSN:
0169-4332
Document type:
Article
Article type:
原著論文
Country of issue:
Netherlands (NLD)
Language:
ENGLISH (EN)
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Thesaurus term/Semi thesaurus term
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JST classification (2):
JST classification
Category name(code) classified by JST.
Electronic structure of surfaces
, Oxide thin films
Terms in the title (6):
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