Light-emitting diodes and laser diodes based on a Ga1-xInxAs/GaAs1-ySby type II superlattice on InP substrate.

PETER M; KIEFER R; FUCHS F; HERRES N; WINKLER K; BACHEM K-H; WAGNER J

Art

J-GLOBAL ID：200902193793714232 Reference number：99A0432951

Light-emitting diodes and laser diodes based on a Ga_1-xIn_xAs/GaAs_1-ySb_y type II superlattice on InP substrate.

InP基板上のGa_1-xIn_xAs/GaAs_1-ySb_yタイプII超格子をベースとする発光ダイオードとレーザダイオード

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Author (7)： , , , , , ,
Material：
Volume： 74 Issue： 14 Page： 1951-1953 Publication year： Apr. 05, 1999
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor lasers , Light emitting devices

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