Interface properties of N<sub>2</sub>O-annealed SiC metal oxide semiconductor devices.

CHAKRABORTY S; LAI P T; XU J P; CHAN C L; CHENG Y C

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J-GLOBAL ID：200902193862044392 Reference number：01A0528073

Interface properties of N₂O-annealed SiC metal oxide semiconductor devices.

N₂O-アニール処理SiC金属-酸化膜-半導体デバイスの界面特性

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Author (5)： , , , ,
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Volume： 45 Issue： 3 Page： 471-474 Publication year： Mar. 2001
JST Material Number： H0225A ISSN： 0038-1101 Document type： Article
Article type：原著論文 Country of issue： United Kingdom (GBR) Language： ENGLISH (EN)

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Materials of solid-state devices

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Interface properties of N2O-annealed SiC metal oxide semiconductor devices.

Interface properties of N₂O-annealed SiC metal oxide semiconductor devices.