Art
J-GLOBAL ID:200902194227938952   Reference number:00A0767983

Doping screening of polarization fields in nitride heterostructures.

窒化物ヘテロ構造における分極場のドーピングスクリーニング
Author (5):
Material:
Volume: 76  Issue: 26  Page: 3950-3952  Publication year: Jun. 26, 2000 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=00A0767983&from=J-GLOBAL&jstjournalNo=H0613A") }}
JST classification (2):
JST classification
Category name(code) classified by JST.
Semiconductor-semiconductor contacts with Gr.13-15 element compounds  ,  Luminescence of semiconductors 
Terms in the title (5):
Terms in the title
Keywords automatically extracted from the title.

Return to Previous Page