Art
J-GLOBAL ID：200902194531966326   Reference number：98A0329773

Optical absorption study of Si grown in a hydrogen ambient.

水素雰囲気で成長させたSiの光吸収
Author (1)：
SUEZAWA M

About SUEZAWA M

(Tohoku Univ., Sendai, JPN)

About Tohoku Univ., Sendai, JPN


Material：
Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)

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Volume： 83  Issue： 4  Page： 1958-1961  Publication year： Feb. 15, 1998 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
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All keywords is available on JDreamIII(charged).
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*silicon

About silicon

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Infrared spectra,Raman scattering and Raman spectra of semiconductors 
(BM08066B)

About Infrared spectra,Raman scattering and Raman spectra of semiconductors

,  Lattice defects in semiconductors 
(BK12040Q)

About Lattice defects in semiconductors

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
水素雰囲気

About 水素雰囲気

, 
成長

About 成長

, 
Si

About Si

, 
光吸収

About 光吸収


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