Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films.

KOIZUMI S; KAMO M; SATO Y; OZAKI H; INUZUKA T

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J-GLOBAL ID：200902194737321976 Reference number：97A0855500

Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films.

りんをドープした{111}ホモエピタキシャル・ダイヤモンド薄膜の成長と評価

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Material：
Volume： 71 Issue： 8 Page： 1065-1067 Publication year： Aug. 25, 1997
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films

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