Art
J-GLOBAL ID：200902194771710698   Reference number：01A1016996

Mechanism of electron-irradiation-induced recrystallization in Si.

Siにおける電子照射に誘起された再結晶化の機構
Author (4)：
FRANTZ J

About FRANTZ J

(Univ. Helsinki, FIN)

About Univ. Helsinki, FIN

, 
TARUS J

About TARUS J

(Univ. Rome “La Sapienza”, Rome, ITA)

About Univ. Rome “La Sapienza”, Rome, ITA

, 
NORDLUND K

About NORDLUND K

(Univ. Helsinki, FIN)

About Univ. Helsinki, FIN

, 
KEINONEN J

About KEINONEN J

(Univ. Helsinki, FIN)

About Univ. Helsinki, FIN


Material：
Physical Review. B. Condensed Matter and Materials Physics  (Physical Review. B. Condensed Matter)

About Physical Review. B. Condensed Matter and Materials Physics


Volume： 64  Issue： 12  Page： 125313.1-125313.5  Publication year： Sep. 15, 2001 
JST Material Number： D0746A  ISSN： 1098-0121  CODEN： PRBMDO  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
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All keywords is available on JDreamIII(charged).
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*silicon

About silicon

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Structure of amorphous semiconductors 
(BK04030O)

About Structure of amorphous semiconductors

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
Si

About Si

, 
電子照射

About 電子照射

, 
誘起

About 誘起

, 
再結晶化

About 再結晶化


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