On GaN crystallization by ammonothermal method.

DWILINSKI R; BARANOWSKI J M; KAMINSKA M; DORADZINSKI R; GARCZYNSKI J; SIERZPUTOWSKI L

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J-GLOBAL ID：200902195243124945 Reference number：97A0096409

On GaN crystallization by ammonothermal method.

アンモニウム熱法によるGaNの結晶成長

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Author (6)： , , , , ,
Material：
Volume： 90 Issue： 4 Page： 763-766 Publication year： Oct. 1996
JST Material Number： A0319A ISSN： 0587-4246 CODEN： APTLBW Document type： Article
Article type：原著論文 Country of issue： Poland (POL) Language： ENGLISH (EN)

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Crystal growth of semiconductors , Luminescence of semiconductors

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