Investigation of the luminescence properties of Si/βFeSi<sub>2</sub>/Si heterojunction structures fabricated by ion beam synthesis.

HUNT T D; REESON K J; GWILLIAM R M; HOMEWOOD K P; WILSON R J; SEALY B J

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J-GLOBAL ID：200902196970065311 Reference number：94A0107735

Investigation of the luminescence properties of Si/βFeSi₂/Si heterojunction structures fabricated by ion beam synthesis.

イオンビーム合成で作製したSi/βFeSi₂/Siヘテロ接合構造のルミネセンス特性

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Volume： 57 Issue： 1/6 Page： 25-27 Publication year： Nov. 1993
JST Material Number： D0731A ISSN： 0022-2313 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Luminescence of semiconductors , Semiconductor-semiconductor contacts without Gr.13-15 element compounds

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Investigation of the luminescence properties of Si/βFeSi2/Si heterojunction structures fabricated by ion beam synthesis.

Investigation of the luminescence properties of Si/βFeSi₂/Si heterojunction structures fabricated by ion beam synthesis.